RN1310(TE85L,F)

RN1310(TE85L,F)

$0.19
  • Description:TRANS PREBIAS NPN 50V 0.1A SC70
  • Series:-

SKU:b79acf0b1baf Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SC70
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250 MHz
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70

Download product information

RN1310(TE85L,F)

Overview

The RN1310(TE85L,F) is a pre-biased NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN transistor with a built-in bias resistor in an SC-70 (USM) surface-mount package. The device features a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a maximum power dissipation of 150 mW. It includes a built-in bias resistor ratio of 0.47 and offers a minimum DC current gain (hFE) of 50.

Feature Summary

  • Integrates NPN transistor with built-in bias resistor for simplified circuit design
  • Compact SC-70 surface-mount package suitable for space-constrained applications
  • High collector-emitter voltage rating of 50 V

Applications

  • General-purpose switching circuits
  • Small signal amplification stages
  • Logic interface buffering

Procurement Notes

Verify the exact manufacturer designation, as sourcing may list Toshiba or Toshiba Semiconductor and Storage. Confirm the SC-70 package type and pinout compatibility with your PCB footprint. Ensure the built-in resistor ratio matches your biasing requirements. Check RoHS compliance status if required for your specific manufacturing standards.

Selection Notes

Select this component when a compact NPN switch with integrated biasing is needed. The 50 V rating supports moderate voltage levels. The 100 mA current capacity suits low-power signaling tasks. Consider the 150 mW power dissipation limit for thermal management in dense layouts. Compare against other SC-70 digital transistors if higher gain or different resistor ratios are required.

Part Context

This part belongs to Toshiba's discrete semiconductor product line, specifically within the category of pre-biased bipolar transistors. It is designed for surface-mount technology (SMT) assembly. The SC-70 package provides a small form factor compared to traditional through-hole alternatives, facilitating automated placement in modern electronics manufacturing processes.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout and electrical specifications carefully before substituting with generic equivalents.

RN1310(TE85L,F)RN1310(TE85L,F)
$0.19
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