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The RN1310(TE85L,F) is a pre-biased NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN transistor with a built-in bias resistor in an SC-70 (USM) surface-mount package. The device features a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a maximum power dissipation of 150 mW. It includes a built-in bias resistor ratio of 0.47 and offers a minimum DC current gain (hFE) of 50.
Verify the exact manufacturer designation, as sourcing may list Toshiba or Toshiba Semiconductor and Storage. Confirm the SC-70 package type and pinout compatibility with your PCB footprint. Ensure the built-in resistor ratio matches your biasing requirements. Check RoHS compliance status if required for your specific manufacturing standards.
Select this component when a compact NPN switch with integrated biasing is needed. The 50 V rating supports moderate voltage levels. The 100 mA current capacity suits low-power signaling tasks. Consider the 150 mW power dissipation limit for thermal management in dense layouts. Compare against other SC-70 digital transistors if higher gain or different resistor ratios are required.
This part belongs to Toshiba's discrete semiconductor product line, specifically within the category of pre-biased bipolar transistors. It is designed for surface-mount technology (SMT) assembly. The SC-70 package provides a small form factor compared to traditional through-hole alternatives, facilitating automated placement in modern electronics manufacturing processes.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout and electrical specifications carefully before substituting with generic equivalents.