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The Toshiba RN1311,LF is a silicon NPN epitaxial bias resistor built-in transistor (digital transistor) designed for switching, inverter, interfacing, and driver circuits. It integrates an internal base resistor to simplify circuit design and reduce component count. The device is AEC-Q101 qualified for automotive applications. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a power dissipation (PC) of 100 mW. The typical DC current gain (hFE) is 120 at IC = 1 mA, with a maximum transition frequency (fT) of 250 MHz. The input resistance (R1) is typically 10 kΩ.
Verify the specific ordering suffix against the manufacturer's official orderable part number list to confirm qualification status. The RN1311,LF variant is designated for general use and unintended use applications. Confirm that the required AEC-Q101 automotive qualification aligns with the intended system environment before procurement.
Select the RN1311,LF when a standard NPN digital transistor with a 10 kΩ input resistor is required. Ensure the application operates within the 50 V collector-emitter voltage limit and 100 mA continuous current rating. Consider the complementary RN1300 series if PNP logic inversion is needed for the same circuit topology.
The RN1311 belongs to Toshiba's Bias Resistor Built-in Transistor (Digital Transistor) family, which combines a single NPN transistor with integrated bias resistors. This series aims to miniaturize equipment and streamline manufacturing processes by replacing discrete resistor-transistor networks with a single surface-mount package.
The RN1310 serves as the direct complementary PNP equivalent within the same product family. For cross-manufacturer replacements, verify that the substitute component matches the 10 kΩ input resistance, 50 V VCEO rating, and USM package dimensions.