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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SC70
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：250 MHz
- Power - Max：100 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70
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Overview
The RN1311,LXHF is a single NPN epitaxial planar silicon bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. Designed for switching, inverter, interfacing, and driver circuits, it integrates an internal bias network to simplify design. The device features a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation of 100 mW. It utilizes the USM surface-mount package with a typical input resistance of 10 kΩ. The component is qualified under AEC-Q101 standards for automotive applications.
Feature Summary
- Integrated bias resistors reduce external component count and assembly time.
- AEC-Q101 qualification ensures reliability for automotive use cases.
- Complementary configuration available with PNP counterpart devices.
Applications
- Switching circuits
- Inverter circuits
- Interfacing applications
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official orderable part number list to confirm AEC-Q101 automotive qualification status. Ensure the selected variant matches the required application category, as general-use and automotive versions share similar electrical characteristics but differ in reliability standards. Confirm RoHS compliance requirements prior to procurement.
Selection Notes
Select this component when a compact NPN solution with integrated base biasing is required for low-power switching or logic interfacing. The 10 kΩ input resistance suits standard logic levels. Consider the USM package dimensions for PCB layout constraints. Verify that the 100 mA collector current and 100 mW power dissipation ratings exceed the maximum expected load conditions in the target circuit design.
Part Context
This device belongs to the RN13xx series of bias resistor built-in transistors from Toshiba. It serves as the NPN equivalent to the RN23xx series. The LXHF suffix indicates a specific packaging and handling format within the broader RN1311 product family, which includes variants like LF and LXGF.
Replacement Considerations
Direct replacements include other single NPN BRTs with 50V VCEO, 100mA IC, and ~10kΩ R1. Verify pinout compatibility (Base-Emitter-Collector) and package footprint (USM/SOT-323). Check if the substitute meets AEC-Q101 requirements if automotive qualification is mandatory.
FAQ
What is the typical value of the built-in input resistance?
The typical input resistance (R1) for the RN1311 is 10 kΩ.
Is the RN1311,LXHF suitable for automotive applications?
Yes, the RN1311,LXHF is listed as AEC-Q101 qualified for automotive use in the official datasheet.
What is the maximum collector-emitter saturation voltage?
The maximum collector-emitter saturation voltage (VCE(sat)) is 0.3 V at IC = 5 mA and IB = 0.25 mA.
