RN1312(TE85L,F)

$0.20

Description：TRANS PREBIAS NPN 50V 0.1A SC70
Series：-

SKU:641f9e78ef5f Category: Single, Pre-Biased Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS NPN 50V 0.1A SC70
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Resistors Included：R1 Only
Transistor Type：NPN - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：22 kOhms
Resistor - Emitter Base (R2)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)：100nA (ICBO)
Frequency - Transition：250 MHz
Power - Max：150 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SC-70

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RN1312(TE85L,F)

Overview

The RN1312(TE85L,F) is a single NPN pre-biased small signal transistor manufactured by Toshiba Semiconductor and Storage. It integrates a built-in bias resistor with a ratio of 0.47, housed in an SC-70 (USM) surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 50 and a power dissipation rating of 150 mW. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

Integrates a built-in bias resistor with a fixed ratio of 0.47 for simplified circuit design
Utilizes the compact SC-70 (USM) surface-mount package for space-constrained applications
Supports high thermal stability with a maximum operating junction temperature of +150°C

Applications

General-purpose switching circuits requiring integrated biasing
Low-voltage digital logic interface stages
Signal amplification in portable electronic devices

Procurement Notes

Verify the specific suffix TE85L,F against official Toshiba documentation to confirm packaging and lead time specifications. Ensure the SC-70 footprint matches the target PCB layout. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before finalizing procurement orders.

Selection Notes

Select this component when a single NPN transistor with an integrated base resistor is required to reduce external component count. The 0.47 resistor ratio suits applications needing moderate base drive current. Consider the 150 mW power dissipation limit and 50 V voltage rating to ensure operation remains within safe limits for low-power signal processing tasks.

Part Context

This part belongs to Toshiba's series of pre-biased transistors designed to replace discrete resistor-transistor networks. The RN1312 variant specifically provides an NPN configuration with a standardized internal resistance ratio. It serves as a direct replacement for complex discrete biasing arrangements in consumer electronics and industrial control modules.