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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SC70
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：250 MHz
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70
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Overview
The RN1313(TE85L,F) is a pre-biased NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 100 mA. The device operates with a maximum power dissipation of 100 mW and supports a transition frequency up to 250 MHz. Packaged in the SC-70 surface-mount format, it integrates internal biasing resistors to simplify circuit design while maintaining low profile requirements for modern electronics.
Feature Summary
- Integrates internal biasing network for simplified circuit implementation
- Compact SC-70 surface-mount package suitable for space-constrained designs
- NPN configuration optimized for switching applications
Applications
- General-purpose switching circuits
- Driver stages for logic interfaces
- Low-power signal amplification
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific tape-and-reel packaging specifications prior to procurement. Ensure storage conditions adhere to moisture sensitivity levels defined in the official datasheet to maintain reliability during assembly processes.
Selection Notes
Select this component when a compact NPN solution with integrated biasing is required. The SC-70 package offers a small footprint compared to larger transistor packages. Consider the 50 V voltage rating and 100 mA current limit to ensure operation within safe boundaries for the intended application load.
Part Context
This part belongs to Toshiba's line of pre-biased transistors, which combine a BJT with built-in resistors. These devices reduce external component count and board space. The RN1313 specifically utilizes an NPN structure, providing a reliable alternative to discrete resistor-transistor combinations in digital and analog switching roles.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult official Toshiba replacement guides or cross-reference databases for compatible equivalents meeting identical electrical and mechanical specifications.
