RN1314,LF

$0.13

Description：TRANS PREBIAS NPN 50V 0.1A USM
Series：-

SKU:ac92aa091c33 Category: Single, Pre-Biased Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS NPN 50V 0.1A USM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Resistors Included：R1 and R2
Transistor Type：NPN - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：1 kOhms
Resistor - Emitter Base (R2)：10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：250 MHz
Power - Max：100 mW
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：USM

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RN1314,LF

Overview

The RN1314,LF is a digital transistor manufactured by Toshiba Semiconductor and Storage. It is a Built-in Bias Resistor Transistor (BRT) featuring an NPN configuration with integrated base and emitter resistors of 1 kOhm and 10 kOhm respectively. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 V. It operates with a transition frequency of 250 MHz and a maximum power dissipation of 200 mW. The component utilizes the S-Mini surface-mount package.

Feature Summary

Integrates bias resistors to simplify circuit design and reduce component count
Optimized for switching, inverter, interface, and driver applications
Available in automotive-grade variants compliant with AEC-Q101 standards

Applications

Switching circuits
Inverter circuits
Interface circuits
Driver circuits

Procurement Notes

Verify the specific suffix designation when sourcing, as the standard RN1314,LF may be discontinued or replaced by automotive-compliant versions such as the RN1314FE,LXHF. Confirm RoHS compliance status and check current availability through authorized distributors, as lead times and stock levels vary significantly between standard and qualified automotive grades.

Selection Notes

Select this component for designs requiring a single NPN digital transistor with low input resistance values. The 1 kOhm base resistor suits high-speed switching needs where drive current is available. Ensure the application voltage does not exceed 50 V and that thermal management accommodates the 200 mW power rating within the S-Mini package constraints.

Part Context

This part belongs to Toshiba's RN series of built-in bias resistor transistors. These devices combine bipolar junction transistors with internal resistive networks to replace discrete BJT-resistor combinations. The series includes complementary PNP types and various resistor ratios to support diverse logic and analog switching requirements across consumer and industrial electronics.