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The RN1314(TE85L,F) is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates an internal base resistor to simplify circuit design and reduce component count. The device features a collector-emitter breakdown voltage of 50 V and a continuous collector current rating of 100 mA. It operates with a maximum power dissipation of 100 mW and supports a transition frequency of 250 MHz. Packaged in the SC-70 surface-mount format, it is designed for high-speed switching applications requiring compact footprint and reliable performance.
Verify the specific suffix TE85L,F against the official Toshiba datasheet to confirm package type and tape/reel specifications. Ensure compatibility with RoHS directives and check moisture sensitivity levels prior to assembly. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Confirm storage conditions align with lead-free soldering requirements.
Select this component when a single NPN transistor with integrated biasing is required for high-frequency switching. Consider the 50 V voltage rating and 100 mA current limit for load matching. Evaluate the SC-70 package dimensions against board space constraints. Compare transition frequency specifications against signal speed requirements to ensure adequate bandwidth.
This component belongs to Toshiba's pre-biased transistor series, which combines discrete transistors with internal resistors. These devices are engineered to replace multiple discrete components, thereby reducing PCB area and assembly complexity. The series targets applications demanding reliable switching performance in consumer electronics and industrial control systems.