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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SC70
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70
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Overview
The RN1315,LF is a single NPN epitaxial planar Bias Resistor Built-in Transistor (BRBT) manufactured by Toshiba Semiconductor and Storage. It integrates an NPN transistor with internal bias resistors to simplify circuit design and reduce component count. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical characteristics include a DC current gain (hFE) of at least 50 at 10mA/5V and a saturation voltage of no more than 300mV at 250µA base current and 5mA collector current. The unit features a transition frequency of 250MHz and a maximum power dissipation of 200mW in surface-mount packaging.
Feature Summary
- Integrates NPN transistor with built-in bias resistors to minimize external components
- Simplifies circuit design for switching, inverter, interface, and driver applications
- Reduces manufacturing process complexity through compact package integration
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific suffix against official Toshiba documentation to confirm exact resistor values and package type. Confirm availability status as distribution listings may vary. Ensure the ordering code matches the required pin configuration and thermal specifications for the target PCB layout.
Selection Notes
Select this component when a single NPN pre-biased transistor is required for logic interfacing or low-current switching. Compare internal resistor ratios against circuit requirements to ensure proper drive levels. Verify that the 200mW power rating and 250MHz frequency meet the operational demands of the application environment.
Part Context
This part belongs to the Toshiba RN series of Bias Resistor Built-in Transistors. These devices are designed to replace discrete transistor-resistor combinations. The RN1315 specifically provides an NPN configuration with integrated biasing, serving as a complementary counterpart to PNP variants within the same product family.
Replacement Considerations
Check for direct equivalents such as the RN2315 if a PNP configuration is needed. Verify compatibility with other manufacturers' BRBTs by matching Vce, Ic, hFE, and internal resistance values. Ensure package dimensions align with existing footprints.
