SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN1316,LF is a pre-biased NPN bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. It integrates internal base resistor R1 of 4.7 kOhms and emitter resistor R2 of 10 kOhms to simplify circuit design. The device supports a maximum collector current of 100 mA and a collector-emitter voltage breakdown of 50 V. It features a transition frequency of 250 MHz and a maximum power dissipation of 100 mW. The component is housed in an SC-70 surface-mount package.
Verify the specific suffix designation against official Toshiba documentation to confirm exact electrical characteristics and package type. Ensure that the ordered variant matches the required thermal and voltage ratings for the target application environment. Cross-reference datasheet parameters with system requirements prior to final procurement decisions.
Select this component when a compact NPN solution with integrated biasing is required. Consider the 100 mA current limit and 50 V voltage rating for suitability. Evaluate the SC-70 footprint constraints against available board space. Confirm that the 100 mW power dissipation aligns with thermal management capabilities in the final assembly.
This part belongs to Toshiba's pre-biased BJT family, designed to replace discrete resistor networks. It consolidates transistor and resistor functions into a single surface-mount device. This integration reduces component count and PCB area while maintaining standard NPN switching performance characteristics for general electronic applications.
Consult official Toshiba substitution guides for verified equivalents. Generic cross-references may not match the integrated resistor values or package dimensions.