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The RN1317(TE85L,F) is a pre-biased NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN transistor with an internal bias resistor network within a compact SC-70 (SOT-323) surface-mount package. The device features a collector-emitter voltage rating of 50 V, a continuous collector current capacity of 100 mA, and a maximum operating frequency of 250 MHz. Power dissipation is rated at 100 mW, with a typical input resistance of 4.7 kOhms. Designed for low-power applications, it supports operation across a temperature range suitable for standard electronic environments.
Verify the specific suffix TE85L,F against the manufacturer's official datasheet to ensure correct tape-and-reel packaging specifications. Confirm RoHS compliance status directly from the product documentation prior to integration. Cross-reference the SC-70 pinout configuration with the target PCB footprint to prevent assembly errors during manufacturing.
Select this component when a compact NPN switch with integrated biasing is required. Ensure the 50 V voltage rating and 100 mA current limit meet the load requirements. Consider the 250 MHz frequency capability for high-speed applications. Verify that the 100 mW power dissipation rating aligns with the thermal constraints of the enclosure.
This part belongs to Toshiba's RN series of pre-biased transistors, which combine discrete transistors with on-chip resistors. These components are designed to reduce board space and simplify assembly compared to discrete resistor-transistor combinations. The SC-70 package variant offers a smaller footprint than traditional SOT packages, fitting modern miniaturized designs.
Public confirmed substitute part numbers are not available in the provided documentation. Consult Toshiba's official cross-reference guides or distributor catalogs for verified equivalents.