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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SMINI
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：S-Mini
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Overview
The RN1401,LF is a single NPN pre-biased bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage of 50V, a continuous collector current of 100mA, and a transition frequency of 250MHz. The device features a minimum DC current gain (hFE) of 50 at 10mA and 5V, with a maximum saturation voltage of 300mV at 250µA base current and 5mA collector current. Maximum power dissipation is 200mW, and the collector cutoff current is limited to 500nA.
Feature Summary
- Integrates built-in bias resistors to reduce component count and simplify manufacturing processes.
- Designed for switching, inverter, interface, and driver circuit applications.
- Provides simplified circuit design through integrated resistor network.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix and package variant when sourcing, as availability may vary by region. Confirm RoHS compliance status and check for end-of-life notices directly from Toshiba Semiconductor and Storage documentation before finalizing procurement plans.
Selection Notes
Select this component for designs requiring a single NPN transistor with integrated biasing. Ensure the 50V voltage rating and 100mA current capacity meet system requirements. Consider the S-Mini (SOT-23) package constraints for PCB layout and thermal management during selection.
Part Context
The RN1401 belongs to Toshiba's RN series of digital transistors, which are designed to replace discrete BJT and resistor combinations. This series aims to minimize board space and assembly costs by integrating bias networks directly into the semiconductor package, offering a compact solution for low-power logic and signal processing tasks.
Replacement Considerations
Official complementary parts include the RN2401 through RN2406 series, which serve as PNP equivalents or variations within the same functional family. Verify pinout compatibility and electrical parameter equivalence before substituting with other manufacturers' devices.
FAQ
What is the typical configuration of the internal bias resistors?
The datasheet specifies that the RN1401 includes built-in bias resistors, though specific resistance values are not detailed in the provided summary text; they are integrated to simplify external circuit design.
Is the RN1401,LF suitable for high-frequency applications?
Yes, the device has a transition frequency of 250MHz, making it suitable for various switching and interface applications within its specified operating limits.
What is the maximum power dissipation for this component?
The maximum power dissipation is rated at 200mW under standard operating conditions.
