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The RN1402,LF is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN transistor with built-in bias resistors (R1 and R2) in a compact S-Mini package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical characteristics include a minimum DC current gain (hFE) of 50 at 10mA and 5V, and a maximum saturation voltage of 300mV at 250µA base current and 5mA collector current. The transition frequency is rated at 250MHz, with a maximum power dissipation of 200mW.
Verify the specific ordering suffix to confirm packaging type, as the RN1402,LF family includes tape-and-reel, cut-tape, and Digi-Reel options. Confirm RoHS compliance status and moisture sensitivity level requirements against project specifications before finalizing procurement orders.
Select this component when a single NPN pre-biased transistor is required in a small surface-mount package. Ensure the 50V voltage rating and 100mA current capacity meet the load requirements. Verify that the integrated resistor values are suitable for the driving logic levels.
The RN1402 belongs to Toshiba's general-purpose discrete item lineup, specifically within the single pre-biased BJT category. It is part of a series designed to replace multiple discrete components, offering a compact solution for low-power switching and signal conditioning tasks in consumer and industrial electronics.
Public confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative single NPN pre-biased transistors from other manufacturers based on pin compatibility, voltage ratings, and package dimensions.