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The RN1402S,LF is a single NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates internal base resistor R1 (10 kOhms) and emitter resistor R2 (10 kOhms) within a compact S-Mini package, equivalent to TO-236-3 or SC-59. Key electrical specifications include a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a transition frequency of 250 MHz. The device features a minimum DC current gain of 50 at 10 mA and 5 V, with a maximum saturation voltage of 300 mV under specified conditions. Maximum power dissipation is rated at 200 mW.
Verify the specific suffix 'S' against official Toshiba documentation to confirm package variant accuracy, as standard listings often reference 'RN1402,LF'. Ensure compliance with RoHS directives if required by the target application. Cross-reference datasheet revision dates to confirm parameter consistency before finalizing procurement specifications.
Select this component when a single NPN pre-biased transistor with 10k/10k resistor configuration is required. Verify that the 50 V breakdown voltage and 100 mA current rating meet the load requirements. Consider the S-Mini footprint constraints during PCB layout planning to ensure adequate thermal clearance for the 200 mW power dissipation limit.
This part belongs to Toshiba's digital transistor series, which combines bipolar junction transistors with integrated bias resistors. These devices are designed to replace discrete resistor-transistor combinations, reducing component count and assembly time. The RN1402 series specifically targets applications needing reliable NPN switching with standardized bias ratios.
Direct substitutes may include other manufacturers' NPN pre-biased transistors with identical 10k/10k resistor values and compatible pinouts. Verify package compatibility and electrical parameters such as Vceo and Ic before substitution. Consult official cross-reference guides for validated alternatives.