RN1403,LF

Overview

The RN1403,LF is a single NPN bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates an NPN epitaxial planar silicon transistor with two internal bias resistors within a compact S-Mini surface-mount package. The device supports a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. Key electrical characteristics include a DC current gain (hFE) minimum of 70 at 10 mA and 5 V, and a collector-emitter saturation voltage maximum of 300 mV at 250 µA base current and 5 mA collector current. The component features a transition frequency of 250 MHz and a maximum power dissipation of 200 mW. Internal resistor values are specified as R1 = 22 kOhms and R2 = 22 kOhms.

Feature Summary

• Integrates NPN bipolar junction transistor with dual bias resistors to reduce external component count
• Provides simplified circuit design for switching, inverter, and interface applications
• Utilizes S-Mini surface-mount packaging for space-constrained board layouts

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix and tape-and-reel specifications against the manufacturer's latest datasheet before procurement. Confirm that the S-Mini package dimensions align with the target PCB land pattern requirements. Ensure compliance with relevant environmental directives applicable to the final assembly process.

Selection Notes

Select this component when a single NPN BRT configuration with 22 kOhm bias resistors is required. Compare hFE and saturation voltage limits against load requirements. Verify that the 200 mW power dissipation rating accommodates the thermal conditions of the intended application environment.

Part Context

The RN1403,LF belongs to Toshiba's RN series of bias resistor built-in transistors. This series consolidates discrete transistor and resistor functions into single packages. The part complements other variants in the family that offer different resistance ratios or PNP polarity configurations.

Replacement Considerations

Direct functional substitutes may include other single NPN BRTs with similar 22 kOhm/22 kOhm resistor networks and 50 V ratings. Verify pinout compatibility and package footprint equivalence before substitution.