RN1404,LF

RN1404,LF

$0.16
  • Description:TRANS PREBIAS NPN 50V 0.1A SMINI
  • Series:-

SKU:ede77bb44cf7 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SMINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini

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RN1404,LF

Overview

The RN1404,LF is a pre-biased NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with internal bias resistors in a compact S-Mini (SOT-23) surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. Internal resistance values are typically 10kΩ for the base resistor (R1) and 10kΩ for the emitter resistor (R2). Key electrical characteristics include a DC current gain (hFE) of at least 50 at 10mA and 5V, a saturation voltage of 300mV maximum at 250µA base current and 5mA collector current, and a transition frequency of 250MHz. The component operates within a standard temperature range and dissipates up to 200mW.

Feature Summary

  • Integrates NPN transistor with built-in bias resistors to simplify circuit design
  • Provides high-speed switching capability suitable for logic interface applications
  • Utilizes compact S-Mini surface-mount packaging for space-constrained designs

Applications

  • Logic level shifting between different voltage domains
  • Driver circuits for small-signal loads and relays
  • Switching elements in portable electronic devices

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pin configuration and resistance tolerances. Ensure the procurement channel provides traceable documentation confirming the component originates from Toshiba Semiconductor and Storage. Cross-reference the part number with authorized distributor catalogs to validate authenticity and avoid counterfeit components.

Selection Notes

Select this component when a single-package solution combining a transistor and bias network is required to reduce board space and assembly steps. Verify that the 50V collector-emitter voltage rating exceeds the maximum operating voltage of the target application. Confirm that the 100mA current capacity meets the load requirements and that the 10kΩ internal resistors provide appropriate drive levels for the connected logic gates.

Part Context

This component belongs to the RN1404 series of pre-biased transistors offered by Toshiba. The series includes variations such as the RN1402 and RN1403, which may differ in internal resistance values or transistor configurations. The RN1404 specifically denotes an NPN type with defined 10kΩ/10kΩ resistor ratios, distinguishing it from other series members with different electrical characteristics.

Replacement Considerations

Potential substitutes include the RN1402,LF or RN1404LXGF(T), provided they match the NPN configuration and S-Mini package. Verify that alternative parts maintain equivalent voltage ratings, current capabilities, and internal resistance values to ensure functional compatibility without redesigning the surrounding circuitry.

RN1404,LFRN1404,LF
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