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The RN1404S,LF is a single NPN pre-biased digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with internal biasing resistors R1 and R2, both specified at 10 kOhms. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a DC current gain (hFE) of at least 50 at 10 mA and 5 V, a saturation voltage of 300 mV maximum at 250 µA base current and 5 mA collector current, and a transition frequency of 250 MHz. Power dissipation is rated at 200 mW, with a collector cutoff current of 500 nA maximum.
Verify the specific suffix 'S' against official Toshiba documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS3 standards as indicated for the LF series. Confirm availability through authorized distributors or direct manufacturer channels, as supply status may vary by region and lot.
Select this component when a compact NPN solution with integrated base and emitter resistors is required. The 10 kOhm resistor values are suitable for standard TTL and CMOS logic interfacing. Consider the S-Mini package constraints for PCB layout and thermal dissipation requirements relative to the 200 mW power rating.
This part belongs to the RN1404 series of pre-biased transistors from Toshiba. It shares functional similarities with the RN1402,LF but differs in configuration or pinout specifics defined by the 'RN1404' designation. The 'LF' suffix denotes lead-free construction compliant with environmental directives.
Publicly confirmed substitute part numbers for RN1404S,LF are not available in the provided source material.