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The RN1406,LF is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors R1 (4.7 kOhms) and R2 (47 kOhms) within an S-Mini (TO-236-3/SC-59/SOT-23-3) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a transition frequency of 250 MHz. The device exhibits a minimum DC current gain (hFE) of 80 at 10 mA and 5 V, with a maximum saturation voltage of 300 mV under specified conditions.
Verify the specific ordering suffix against official Toshiba documentation to confirm packaging type and compliance status. Ensure the source document explicitly identifies the part as RN1406,LF. Confirm availability through authorized distributors or direct manufacturer channels. Cross-reference datasheet revisions to ensure compatibility with current design requirements.
Select this component when a single NPN digital transistor with a 4.7 kOhm base resistor and 47 kOhm emitter resistor is required. The S-Mini package suits space-constrained surface-mount designs. Verify that the 50 V breakdown voltage and 100 mA current rating align with the target application's electrical loads and operating conditions.
This component belongs to the RN14xx series of single NPN pre-biased transistors from Toshiba. These devices are designed to replace discrete BJT and resistor combinations, offering a compact solution for logic interface and switching tasks. The RN1406 variant specifically features a higher emitter resistance compared to other members in the series.
Check for compatible substitutes such as the RN1416,LF, which shares the same package and general electrical characteristics but differs in internal resistor values. Verify pinout compatibility and thermal performance before substitution.