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The RN1406S,LF(D) is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates internal biasing resistors R1 (4.7 kOhms) and R2 (10 kOhms) within an S-Mini surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a transition frequency of 250 MHz. The device features a minimum DC current gain of 80 at 10 mA and 5 V, with a maximum saturation voltage of 300 mV under specified conditions.
Verify the specific suffix 'D' against official Toshiba documentation to confirm packaging or tape-and-reel specifications. Ensure the part number matches the standard RN1406,LF electrical characteristics. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before procurement.
Select this component when a compact NPN solution with integrated base and emitter resistors is required. The 4.7 kOhm base resistor suits general-purpose switching, while the 10 kOhm emitter resistor provides stability. Verify that the 100 mA current rating and 50 V breakdown voltage meet the target circuit requirements.
This component belongs to the RN14xx series of pre-biased transistors from Toshiba. It shares the same core electrical profile as the RN1406,LF but may differ in packaging configuration indicated by the suffix. It serves as a direct replacement for discrete resistor-transistor networks in space-constrained designs.
Publicly confirmed substitute part numbers are not available in the provided source material.