RN1406S,LF(D

RN1406S,LF(D

  • Description:TRANS PREBIAS NPN 50V 0.1A SMINI
  • Series:-

SKU:8fed4a8f1626 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SMINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini

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RN1406S,LF(D

Overview

The RN1406S,LF(D) is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates internal biasing resistors R1 (4.7 kOhms) and R2 (10 kOhms) within an S-Mini surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a transition frequency of 250 MHz. The device features a minimum DC current gain of 80 at 10 mA and 5 V, with a maximum saturation voltage of 300 mV under specified conditions.

Feature Summary

  • Integrates dual biasing resistors to simplify circuit design and reduce component count
  • Optimized for high-speed switching applications with a 250 MHz transition frequency
  • Provides low saturation voltage for efficient power dissipation in digital logic interfaces

Applications

  • Digital logic level shifting between different voltage domains
  • Switching circuits in portable electronic devices
  • Interface drivers for microcontroller output pins

Procurement Notes

Verify the specific suffix 'D' against official Toshiba documentation to confirm packaging or tape-and-reel specifications. Ensure the part number matches the standard RN1406,LF electrical characteristics. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before procurement.

Selection Notes

Select this component when a compact NPN solution with integrated base and emitter resistors is required. The 4.7 kOhm base resistor suits general-purpose switching, while the 10 kOhm emitter resistor provides stability. Verify that the 100 mA current rating and 50 V breakdown voltage meet the target circuit requirements.

Part Context

This component belongs to the RN14xx series of pre-biased transistors from Toshiba. It shares the same core electrical profile as the RN1406,LF but may differ in packaging configuration indicated by the suffix. It serves as a direct replacement for discrete resistor-transistor networks in space-constrained designs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

RN1406S,LF(DRN1406S,LF(D

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