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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SMINI
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：S-Mini
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Overview
The RN1407,LF is a single NPN bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates an NPN epitaxial planar silicon transistor with two internal resistors: R1 connected to the base and R2 connected between the base and emitter. The device features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 100mA. Key electrical parameters include a DC current gain (hFE) minimum of 50 at IC=10mA and VCE=5V, and a saturation voltage (VCEsat) maximum of 300mV at IB=250µA and IC=5mA. The transition frequency is specified at 250MHz, with a maximum power dissipation of 200mW. Internal resistance values are R1=10kΩ and R2=10kΩ.
Feature Summary
- Integrates an NPN transistor with dual bias resistors to simplify circuit design and reduce component count.
- Provides high-speed switching capabilities with a transition frequency of 250MHz.
- Features low saturation voltage for efficient signal switching in digital applications.
Applications
- Switching circuits for general-purpose logic interfaces
- Inverter circuits for digital signal processing
- Driver circuits for small-signal loads
Procurement Notes
Verify the specific suffix against official Toshiba documentation to confirm package type and tape/reel specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Ensure the ordering part number matches the exact electrical characteristics required for the target application.
Selection Notes
Select this component when a compact solution for NPN switching or inversion is required without external biasing resistors. Verify that the 10kΩ/10kΩ internal resistor configuration aligns with the driving source impedance and load requirements. Consider the S-Mini package dimensions for PCB layout constraints.
Part Context
The RN1407,LF belongs to the RN series of bias resistor built-in transistors from Toshiba. This series is designed to replace discrete transistor and resistor combinations, offering space savings and improved reliability. It complements other variants in the family such as the RN1402 and RN1403, which differ primarily in internal resistor values.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided reference data. Consult Toshiba's official cross-reference documentation or distributor databases for verified equivalents before implementation.
