RN1408,LF

Overview

The RN1408,LF is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates base resistor R1 (22 kΩ) and emitter resistor R2 (47 kΩ) within an S-Mini package. Key electrical parameters include a collector-emitter breakdown voltage of 50 V, maximum collector current of 100 mA, and transition frequency of 250 MHz. The device features a maximum DC current gain of 50 at 10 mA and 5 V, with a saturation voltage of 300 mV at specific bias conditions. Maximum power dissipation is rated at 200 mW.

Feature Summary

• Integrates built-in bias resistors to simplify circuit design and reduce component count.
• Optimized for high-speed switching applications with a 250 MHz transition frequency.
• Compact surface-mount packaging facilitates automated assembly and space-constrained layouts.

Applications

• General-purpose switching circuits in consumer electronics
• Driver stages for logic interface level shifting
• Signal processing circuits requiring compact NPN configurations

Procurement Notes

Verify the manufacturer part number RN1408,LF against official Toshiba Semiconductor and Storage documentation to ensure authenticity. Confirm that the suffix LF indicates lead-free compliance as per standard industry definitions for this product line. Cross-reference the datasheet revision date to ensure compatibility with current design requirements. Check for any specific handling instructions related to the S-Mini package during procurement.

Selection Notes

Select the RN1408,LF when a compact NPN transistor with integrated biasing is required for general-purpose switching. Ensure the 50 V collector-emitter voltage rating meets the system's peak voltage requirements. Verify that the 100 mA collector current capability aligns with the load specifications. Consider the 200 mW power dissipation limit relative to the thermal environment and PCB copper area available for heat spreading.

Part Context

This component belongs to Toshiba's series of Bipolar Pre-Biased / Digital Transistors. These devices combine a single BJT with internal resistors to replace multiple discrete components. The RN1408 variant specifically utilizes an NPN configuration with defined resistance values for base and emitter connections, targeting applications where board space and assembly time are critical constraints.

Replacement Considerations

Public confirmed substitute part numbers are not provided in the source material. Consult official Toshiba cross-reference guides or authorized distributor databases for verified equivalents. Ensure any replacement maintains identical pinout, voltage ratings, and integrated resistance values to guarantee functional compatibility without redesign.