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The RN1409,LF is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates internal bias resistors to simplify circuit design. The device features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 100mA. Internal resistors are specified as R1 (base) at 47 kOhms and R2 (emitter) at 22 kOhms. Key electrical parameters include a minimum DC current gain (hFE) of 70 at 10mA and 5V, with a maximum saturation voltage of 300mV at 250µA base current and 5mA collector current. The transition frequency is rated at 250MHz, and the maximum power dissipation is 200mW.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific ordering suffixes that may indicate packaging variations. Ensure the part number matches the exact specifications required for the target application before procurement.
Select this component when a single NPN transistor with built-in biasing is required. Compare the integrated resistor values (47k/22k) against circuit requirements. Consider the 50V voltage rating and 100mA current limit to ensure adequate headroom for the intended load conditions.
This component belongs to the RN series of pre-biased transistors from Toshiba. It serves as a complementary or alternative solution to standard discrete BJTs where space saving and reduced component count are priorities. The S-Mini package allows for automated placement in high-volume manufacturing environments.
Check for compatible substitutes such as the RN1402,LF which shares similar electrical characteristics but differs in internal resistor values. Verify pinout compatibility and thermal performance before substituting.