RN1409,LF

RN1409,LF

$0.14
  • Description:TRANS PREBIAS NPN 50V 0.1A SMINI
  • Series:-

SKU:54acb8e6b102 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SMINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini

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RN1409,LF

Overview

The RN1409,LF is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates internal bias resistors to simplify circuit design. The device features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 100mA. Internal resistors are specified as R1 (base) at 47 kOhms and R2 (emitter) at 22 kOhms. Key electrical parameters include a minimum DC current gain (hFE) of 70 at 10mA and 5V, with a maximum saturation voltage of 300mV at 250µA base current and 5mA collector current. The transition frequency is rated at 250MHz, and the maximum power dissipation is 200mW.

Feature Summary

  • Integrated dual bias resistors (R1 and R2) for simplified circuit design
  • Single NPN configuration within a compact surface-mount package
  • High transition frequency suitable for switching applications

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific ordering suffixes that may indicate packaging variations. Ensure the part number matches the exact specifications required for the target application before procurement.

Selection Notes

Select this component when a single NPN transistor with built-in biasing is required. Compare the integrated resistor values (47k/22k) against circuit requirements. Consider the 50V voltage rating and 100mA current limit to ensure adequate headroom for the intended load conditions.

Part Context

This component belongs to the RN series of pre-biased transistors from Toshiba. It serves as a complementary or alternative solution to standard discrete BJTs where space saving and reduced component count are priorities. The S-Mini package allows for automated placement in high-volume manufacturing environments.

Replacement Considerations

Check for compatible substitutes such as the RN1402,LF which shares similar electrical characteristics but differs in internal resistor values. Verify pinout compatibility and thermal performance before substituting.

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