RN1410,LF

Overview

The RN1410,LF is a pre-biased NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single bias resistor of 4.7 kΩ to simplify circuit design. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Key electrical specifications include a DC current gain (hFE) range of 100 to 200 at IC=5mA, and a transition frequency (fT) of 250 MHz. Power dissipation is rated at 200 mW. The component is housed in an S-Mini surface-mount package and complies with AEC-Q101 automotive standards.

Feature Summary

• Integrates a built-in 4.7 kΩ base bias resistor to reduce external component count and simplify mounting.
• Optimized for high-speed switching applications with a transition frequency of 250 MHz.
• Complies with AEC-Q101 automotive qualification standards for reliability in harsh environments.

Applications

• Automotive interface circuits and logic level shifting
• Switching applications in inverter and driver circuits
• General-purpose digital signal processing interfaces

Procurement Notes

Verify the specific suffix designation upon ordering, as variations such as LXHF may exist within the product family. Confirm that the required package type matches the S-Mini footprint specified in the official datasheet. Ensure that the procurement channel provides documentation confirming AEC-Q101 compliance if automotive application validation is required. Cross-reference the manufacturer part number with authorized distributor catalogs to ensure authenticity and traceability.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required for 50V logic interfaces. The 4.7 kΩ internal resistor value is suitable for standard TTL or CMOS driving levels. Consider the 200 mW power rating and thermal characteristics of the S-Mini package for PCB layout planning. This part is appropriate for designs prioritizing space efficiency and reduced assembly complexity over discrete resistor configurations.

Part Context

The RN1410,LF belongs to Toshiba’s RN series of bias resistor-built-in transistors. This series is designed to replace discrete BJT and resistor combinations, offering a standardized solution for digital switching tasks. The RN1410 variant specifically features a 4.7 kΩ base resistor, distinguishing it from other series members like the RN1413 which uses a 47 kΩ resistor. The series targets automotive and industrial markets requiring robust, small-form-factor semiconductor components.

Replacement Considerations

• RN1410,LXHF

FAQ

What is the internal base resistor value for the RN1410,LF?

The RN1410,LF integrates a single bias resistor with a nominal value of 4.7 kΩ connected between the base and emitter terminals.

Is the RN1410,LF qualified for automotive applications?

Yes, the RN1410,LF meets the AEC-Q101 qualification standard for discrete semiconductors, making it suitable for automotive electronic systems.