RN1411,LF

Overview

The RN1411,LF is a single NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN epitaxial planar silicon transistor with built-in bias resistors in a compact S-Mini (SOT-23) surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. Internal resistor values are specified as R1 at 4.7 kOhms and R2 at 10 kOhms. Key electrical characteristics include a DC current gain (hFE) minimum of 50 at 10mA and 5V, and a transition frequency of 250MHz. The component is designed for low power consumption with a maximum power dissipation of 200mW.

Feature Summary

• Integrates NPN transistor with dual bias resistors to simplify circuit design
• Utilizes S-Mini surface-mount packaging for space-constrained applications
• Provides high-speed switching capabilities with a 250MHz transition frequency

Applications

• Switching circuits requiring simplified bias networks
• Inverter circuits for digital logic interfaces
• Driver circuits for low-power loads

Procurement Notes

Verify the specific ordering suffix and tape-and-reel specifications directly with authorized distributors or the manufacturer. Confirm that the RN1411,LF designation matches the required pinout and internal resistor ratios for your schematic. Ensure compliance with RoHS directives if applicable to your manufacturing region. Cross-reference the datasheet revision date to confirm parameter stability before finalizing procurement orders.

Selection Notes

Select this component when a single NPN pre-biased transistor with specific 4.7k/10k resistor ratios is required. Compare against complementary PNP models like the RN2116,LF for push-pull configurations. Evaluate thermal performance within the S-Mini package against the 200mW power dissipation limit. Verify that the 50V breakdown voltage meets the system's peak voltage requirements under all operating conditions.

Part Context

The RN1411 belongs to Toshiba's family of built-in bias resistor transistors, which combine discrete semiconductor devices with passive components. This integration reduces component count and assembly time compared to using separate transistors and resistors. The part is distinct from array types like the RN4901, offering a single-channel solution optimized for individual signal path buffering or switching tasks in consumer and industrial electronics.

Replacement Considerations

Publicly confirmed substitute part numbers for the RN1411,LF are not available in the provided documentation. Engineers should consult official Toshiba replacement guides or verify functional equivalents from other manufacturers based on matching pinouts, resistor values, and electrical ratings.