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The RN1412,LF is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates internal bias resistors to simplify circuit design. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 V. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at specified conditions and a maximum collector-emitter saturation voltage of 300 mV. The component is housed in an S-Mini (SOT-23) surface-mount package with a maximum power dissipation of 200 mW.
Verify the specific suffix against official documentation, as variations may exist. Confirm RoHS compliance status and moisture sensitivity level prior to procurement. Ensure the supplier provides valid traceability documents matching the manufacturer's part number RN1412,LF.
Select this component when a compact NPN solution with integrated biasing is required for low-power switching applications. Compare hFE and saturation voltage requirements against circuit load specifications. Ensure the S-Mini package footprint aligns with the PCB layout constraints.
This part belongs to the RN14xx series of pre-biased transistors from Toshiba. It serves as the NPN counterpart to the RN2412 series. The series is characterized by simplified design processes due to the inclusion of internal resistors, targeting space-constrained consumer and industrial electronics.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameters if considering alternative manufacturers' pre-biased transistors.