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The RN1412,LXHF is a single NPN digital transistor with built-in bias resistors, manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The device includes typical base and emitter resistors of 10 kOhms each. It operates at a maximum frequency of 250 MHz with a power dissipation rating of 100 mW. The component is housed in an SOT-323 package and holds AEC-Q101 automotive qualification.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct resistor values and packaging configuration. Confirm that the AEC-Q101 qualification status aligns with your project's automotive reliability requirements before finalizing procurement decisions.
Select this component when a compact NPN digital transistor with 50V rating and 10kOhm internal biasing is required. Ensure the SOT-323 footprint fits the PCB layout constraints. Verify thermal management capabilities given the 100mW power dissipation limit in the intended operating environment.
This part belongs to Toshiba's RN series of pre-biased transistors designed for automotive and industrial applications. These devices integrate resistors directly onto the silicon die to replace discrete components, saving board space and assembly time while maintaining consistent electrical characteristics across production batches.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer's cross-reference guide or authorized distributor databases for verified equivalents that match the pinout, voltage ratings, and package dimensions.