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The RN1412TE85LF is a single NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a bias resistor to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation of 200 mW. The device features a minimum DC current gain (hFE) of 120 and a typical input resistance of 22 kOhms. It operates within a temperature range of -55°C to +150°C and utilizes an SOT-346-3 surface-mount package.
Verify the specific ordering suffix TE85LF against official Toshiba documentation to confirm packaging format and lead time requirements. Ensure compatibility with RoHS directives if required by the target application. Cross-reference the manufacturer part number with distributor listings to validate authenticity and supply chain status before finalizing procurement orders.
Select this component when a single NPN configuration with a 22 kOhm base resistor is required. Verify that the 50 V collector-emitter voltage and 100 mA current ratings exceed the maximum operational loads. Confirm that the SOT-346-3 package dimensions fit the available PCB footprint and thermal management constraints.
This component belongs to the RN1412 series of bias resistor-built-in transistors. It serves as a complementary counterpart to the PNP type RN2412. The TE85LF suffix indicates the specific tape and reel packaging configuration used for automated surface-mount assembly processes.
Direct functional substitutes within the same family include the RN1413, which offers a different internal resistance value. Designers should verify pinout compatibility and electrical parameter alignment when considering alternative manufacturers or packages.