RN1413,LF

$0.14

Description：TRANS PREBIAS NPN 50V SMINI
Series：-

SKU:3f58dfb18956 Category: Single, Pre-Biased Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS NPN 50V SMINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Resistors Included：R1 Only
Transistor Type：NPN - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：47 kOhms
Resistor - Emitter Base (R2)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)：100nA (ICBO)
Frequency - Transition：250 MHz
Power - Max：200 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：S-Mini

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RN1413,LF

Overview

The RN1413,LF is a pre-biased NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates an internal base resistor of 47 kOhms to simplify circuit design. The device supports a collector-emitter breakdown voltage of 50 V and a continuous DC collector current of 100 mA. Key electrical characteristics include a transition frequency of 250 MHz and a maximum power dissipation of 200 mW. Additional parameters specify a DC current gain of 120 at 1 mA with 5 V bias, and a saturation voltage of 300 mV at 250 µA base current and 5 mA collector current.

Feature Summary

Integrates a single 47 kOhm base resistor for simplified biasing
NPN pre-biased configuration reduces component count
Surface-mount S-Mini package suitable for space-constrained designs

Applications

General-purpose switching circuits
Driver circuits for low-power loads
Interface connections in consumer electronics

Procurement Notes

Verify the complete ordering part number against official Toshiba documentation to ensure correct suffix designation. Confirm that the specific variant matches the required electrical specifications and packaging format. Cross-reference the manufacturer's latest datasheet to validate pinout compatibility and thermal performance requirements before finalizing procurement decisions.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required. Ensure the 50 V voltage rating and 100 mA current capacity meet the target application demands. Consider the 250 MHz transition frequency for high-speed switching needs. Verify that the S-Mini package dimensions align with the available PCB real estate constraints.

Part Context

This component belongs to Toshiba's series of Bias Resistor Built-in Transistors (BRT). These devices combine a single transistor with one or more resistors on a single chip. The RN1413,LF specifically utilizes an NPN transistor structure with a single base resistor, offering a cost-effective alternative to discrete transistor-resistor combinations in standard signal processing applications.