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The RN1413,LXHF is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage, designed for surface-mount applications. It integrates a single PNP epitaxial planar silicon transistor with built-in bias resistors to simplify circuit design. The device features a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -0.1 A. Key electrical parameters include a typical base resistor (R1) of 4.7 kOhms and a minimum DC current gain (hFE) of 120 at -1 mA and -5 V. It operates within a junction temperature range up to +150°C and is housed in an S-Mini-3 package.
Verify the specific suffix LXHF against the manufacturer's official datasheet to confirm packaging details and compliance status. Ensure that the ordering information matches the exact part number required for your bill of materials, as suffixes may indicate variations in tape-and-reel specifications or regional distribution channels.
Select this component when a PNP configuration with integrated biasing is required for compact designs. Compare the 4.7 kOhm input resistance and -50 V rating against circuit requirements. Consider the S-Mini-3 footprint constraints and thermal dissipation limits of 200 mW during the layout phase.
This part belongs to Toshiba's RN series of bias resistor-built-in transistors, commonly referred to as digital transistors. These devices replace discrete resistor-transistor networks, offering improved consistency and reduced assembly complexity compared to standard bipolar junction transistors used in similar switching roles.
Consult official substitution guides for equivalent PNP digital transistors with matching VCEO, IC, and R1 values. Verify pinout compatibility and thermal characteristics before replacing the original component in existing designs.