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The RN1413(TE85L,F) is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates an internal base resistor to simplify circuit design. The device features a collector-emitter voltage rating of 50 V and a continuous collector current capacity of 100 mA. Key electrical parameters include a DC current gain (hFE) minimum of 120 at 1 mA and 5 V, and a maximum operating frequency of 250 MHz. Power dissipation is rated at 200 mW. The component utilizes the S-Mini surface-mount package.
Verify the complete part number including the TE85L suffix to ensure correct tape-and-reel configuration. Confirm RoHS compliance status through official manufacturer documentation prior to procurement. Cross-reference datasheet revisions to validate electrical characteristics against current production batches. Ensure storage conditions align with moisture sensitivity levels specified in the handling guidelines.
Select this component when a compact NPN switch with integrated biasing is required. The 50 V rating suits low-voltage logic systems. The 100 mA current limit defines its suitability for small-signal applications rather than power driving. Consider the S-Mini package dimensions for PCB layout constraints compared to larger transistor footprints.
This part belongs to Toshiba's line of pre-biased transistors designed to replace discrete resistor-transistor networks. The RN series simplifies board space usage by combining active and passive elements. The specific model targets applications requiring reliable switching with minimal external component count.
Consult official Toshiba substitution guides for verified equivalents. Generic replacements may differ in hFE tolerances or internal resistance values. Verify pinout compatibility and thermal performance before integrating alternative components into existing designs.