RN1414,LF

Overview

The RN1414,LF is a single NPN bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates an epitaxial planar silicon NPN transistor with two internal bias resistors within a compact S-Mini surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. Internal resistance values are specified as R1 at 47kΩ and R2 at 22kΩ. Key electrical characteristics include a minimum DC current gain (hFE) of 70 at 10mA and 5V, and a maximum saturation voltage of 300mV at 250µA base current and 5mA collector current. The transition frequency is rated at 250MHz with a maximum power dissipation of 200mW.

Feature Summary

• Integrates an NPN transistor with dual bias resistors to reduce external component count and simplify circuit layout.
• Utilizes Toshiba's PCT process for high reliability and consistent performance in small signal applications.
• Provides simplified switching and inverter circuit design through pre-biased configuration.

Applications

• Switching circuits for general-purpose logic interfaces
• Inverter circuits for digital signal processing
• Driver circuits for low-power loads

Procurement Notes

Verify the specific suffix and packaging format against official Toshiba documentation prior to ordering. Confirm that the requested variant matches the required resistance values and package type. Check current product status as availability may vary by region or production cycle. Ensure compliance with relevant environmental directives such as RoHS if applicable to the specific batch.

Selection Notes

Select this component when a single NPN BRT with 47kΩ input and 22kΩ emitter resistors is required. Compare hFE and Vce(sat) specifications against load requirements. Consider the S-Mini package dimensions for PCB space constraints. Verify thermal management needs against the 200mW power dissipation limit in the intended operating environment.

Part Context

The RN1414,LF belongs to Toshiba's RN series of bias resistor built-in transistors. This series is designed to replace discrete resistor-transistor networks, offering space savings and improved consistency. It complements other variants in the family with different resistance ratios or polarities, serving as a standard solution for interface and switching tasks in consumer and industrial electronics.

Replacement Considerations

Direct substitutes must match the NPN polarity, 50V rating, 100mA current, and identical internal resistor values (R1=47kΩ, R2=22kΩ). Verify pinout compatibility with the S-Mini/SC-59/SOT-23-3 footprint. Cross-reference datasheets for equivalent hFE and transition frequency specifications to ensure functional parity in the target circuit.