RN1415,LF

RN1415,LF

$0.13
  • Description:TRANS PREBIAS NPN 50V 0.1A SMINI
  • Series:-

SKU:89d9104df74a Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SMINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini

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RN1415,LF

Overview

The RN1415,LF is a single NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN epitaxial planar silicon transistor with two internal bias resistors within a compact S-Mini (SC-59/TO-236-3) surface-mount package. The device is rated for a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Internal resistance values are specified as R1 at 4.7 kOhms and R2 at 10 kOhms. Key electrical characteristics include a DC current gain (hFE) of at least 50 at 10 mA and 5 V, a saturation voltage of 300 mV maximum at specific drive conditions, and a transition frequency of 250 MHz. Maximum power dissipation is 200 mW.

Feature Summary

  • Integrates NPN transistor with dual bias resistors to reduce component count
  • Utilizes PCT process for high reliability and stable performance
  • Designed for simplified circuit layout in surface-mount applications

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the exact ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as these details are subject to change and require real-time verification from official supply chain channels.

Selection Notes

Select this component when a single NPN switching element with fixed base biasing is required in a small footprint. Ensure the application voltage does not exceed 50 V and current requirements remain below 100 mA. Verify that the integrated 4.7 kOhm and 10 kOhm resistor values align with the target logic levels and drive currents for the specific interface design.

Part Context

This part belongs to the RN14xx series of Bias Resistor Built-In Transistors (BRBTs). These devices are designed to replace discrete transistor-resistor networks, simplifying assembly and reducing board space. The RN1415 specifically provides NPN configuration with defined resistor ratios, complementing other variants in the family that offer different resistance values or PNP configurations.

Replacement Considerations

Check for direct equivalents such as the RN1416, which shares similar electrical ratings but may differ in internal resistor values. Verify pinout compatibility and thermal characteristics before substitution. Consult Toshiba's official cross-reference guides to confirm functional equivalence and ensure no changes in package dimensions or mounting requirements.

RN1415,LFRN1415,LF
$0.13
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