RN1415,LXHF

RN1415,LXHF

$0.26
  • Description:TRANS PREBIAS NPN 50V SMINI
  • Series:-

SKU:8a4656097739 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SMINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini

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RN1415,LXHF

Overview

The RN1415,LXHF is a single NPN pre-biased bipolar transistor (BRT) from Toshiba Semiconductor and Storage. It integrates bias resistors with a typical base resistor of 2.2 kΩ and emitter resistor of 10 kΩ. Key electrical parameters include a collector-emitter voltage (Vceo) of 50 V, continuous collector current of 100 mA, power dissipation of 200 mW, and transition frequency of 250 MHz. The device operates at temperatures up to +150°C and is housed in an S-Mini (SOT-346) surface-mount package.

Feature Summary

  • Integrates built-in bias resistors to simplify circuit design
  • Single NPN configuration for general-purpose switching and driving
  • High thermal stability with maximum operating temperature of +150°C

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm packaging format and compliance status. Ensure the component meets AEC-Q reliability standards if automotive application is required. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm authenticity and traceability before procurement.

Selection Notes

Select this component when a single NPN BRT with 2.2 kΩ base resistance is required. Consider the 50 V rating and 100 mA current limit for load requirements. The S-Mini package suits space-constrained designs. Verify thermal management needs given the 200 mW dissipation limit and high junction temperature capability.

Part Context

This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors. These devices combine transistors and resistors in a single package to reduce board space and assembly costs. The RN1415 specifically targets applications requiring simple on/off control or signal inversion without external biasing components.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source data. Consult official Toshiba cross-reference guides for verified alternatives.

RN1415,LXHFRN1415,LXHF
$0.26
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