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The RN1415,LXHF is a single NPN pre-biased bipolar transistor (BRT) from Toshiba Semiconductor and Storage. It integrates bias resistors with a typical base resistor of 2.2 kΩ and emitter resistor of 10 kΩ. Key electrical parameters include a collector-emitter voltage (Vceo) of 50 V, continuous collector current of 100 mA, power dissipation of 200 mW, and transition frequency of 250 MHz. The device operates at temperatures up to +150°C and is housed in an S-Mini (SOT-346) surface-mount package.
Verify the specific ordering suffix against official Toshiba documentation to confirm packaging format and compliance status. Ensure the component meets AEC-Q reliability standards if automotive application is required. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm authenticity and traceability before procurement.
Select this component when a single NPN BRT with 2.2 kΩ base resistance is required. Consider the 50 V rating and 100 mA current limit for load requirements. The S-Mini package suits space-constrained designs. Verify thermal management needs given the 200 mW dissipation limit and high junction temperature capability.
This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors. These devices combine transistors and resistors in a single package to reduce board space and assembly costs. The RN1415 specifically targets applications requiring simple on/off control or signal inversion without external biasing components.
Public confirmed substitute part numbers are not available in the provided source data. Consult official Toshiba cross-reference guides for verified alternatives.