RN1416,LF

Overview

The RN1416,LF is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors R1 (4.7 kOhms) and R2 (10 kOhms) within an S-Mini (TO-236-3/SC-59/SOT-23-3) surface-mount package. The device supports a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. Key electrical characteristics include a minimum DC current gain (hFE) of 50 at 10 mA and 5 V, a maximum saturation voltage of 300 mV at 250 µA base current and 5 mA collector current, and a transition frequency of 250 MHz. Maximum power dissipation is rated at 200 mW.

Feature Summary

• Integrates built-in bias resistors to simplify circuit design and reduce component count.
• Utilizes PCT process for high-speed switching performance with a 250 MHz transition frequency.
• Provides low saturation voltage for efficient driver circuit applications.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm packaging type and compliance status. Ensure the component matches the required S-Mini package dimensions and pinout configuration for the target PCB layout. Cross-reference the manufacturer part number RN1416,LF with authorized distributor catalogs to validate authenticity and current production status before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required for high-speed switching or interface tasks. The 4.7 kOhm base resistor value dictates specific drive requirements; verify compatibility with the controlling logic level. Consider the 200 mW power dissipation limit and thermal constraints within the small S-Mini package during system design.

Part Context

This component belongs to the RN14xx series of single NPN pre-biased transistors from Toshiba. It shares the same physical package and general electrical architecture as variants like the RN1402,LF and RN1418, but differs in internal resistor ratios. The RN1416,LF is specifically characterized by its 4.7 kOhm base resistance configuration.

Replacement Considerations

Direct substitutes must match the NPN polarity, 50V rating, 100mA current capacity, and S-Mini package. Verify that alternative pre-biased transistors offer compatible base resistor values (approximately 4.7 kOhm) to maintain equivalent drive characteristics without redesigning the surrounding circuitry.