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The RN1417,LF is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates internal bias resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 100 mA. The device features a typical input resistance of 10 kΩ and an output resistance of 4.7 kΩ. It operates with a transition frequency of 250 MHz and supports a maximum power dissipation of 200 mW. The component is housed in the S-Mini (SOT-346) surface-mount package.
Verify the specific suffix designation against official Toshiba documentation to confirm exact resistor values and packaging configuration. Ensure compatibility with the intended operating temperature range and thermal management requirements. Cross-reference the part number with authorized distributors to validate authenticity and supply chain integrity before finalizing procurement orders.
Select this component when a compact NPN solution with integrated biasing is required for signal switching or logic interfacing. Consider the 50 V voltage rating and 100 mA current capacity relative to load requirements. Evaluate the S-Mini package dimensions against available board space constraints and verify that the internal resistor values align with the target drive conditions.
This part belongs to Toshiba’s series of Bias Resistor Built-in Transistors (BRT). These devices combine a single BJT with one or two resistors on a single silicon chip. This integration reduces component count, saves PCB area, and improves reliability compared to discrete resistor-transistor combinations.
Consult official Toshiba substitution guides for verified equivalents. Generic replacements may differ in internal resistor tolerances or transition frequencies. Verify pinout compatibility and thermal characteristics before integrating alternative components into existing designs.