RN1417(TE85L,F)

RN1417(TE85L,F)

$0.26
  • Description:TRANS PREBIAS NPN 50V 0.1A SMINI
  • Series:-

SKU:95a221219a2e Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SMINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini

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RN1417(TE85L,F)

Overview

The RN1417(TE85L,F) is a pre-biased NPN bipolar transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN transistor with a built-in bias resistor network in a compact surface-mount package. Key electrical specifications include a collector-emitter voltage (Vceo) of -50 V, a continuous collector current (Ic) of -100 mA, and a power dissipation (Pd) of 200 mW. The device features a maximum operating frequency of 250 MHz and a typical input resistance of 4.7 kΩ. It operates within a temperature range of -40°C to +85°C and complies with RoHS standards.

Feature Summary

  • Integrates NPN transistor with internal bias resistors for simplified circuit design
  • Optimized for high-speed switching applications up to 250 MHz
  • Compact S-MINI (SOT-23-3) surface-mount package for space-constrained designs

Applications

  • General-purpose switching circuits
  • Logic level translation interfaces
  • Driver stages for low-power loads

Procurement Notes

Verify the specific suffix TE85L,F against official Toshiba documentation to confirm tape-and-reel packaging and lead-free compliance. Ensure the requested quantity aligns with standard factory pack sizes. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and current production status before finalizing procurement orders.

Selection Notes

Select this component when a compact, single-channel NPN switch with integrated base biasing is required. It eliminates external resistor components, reducing board space and assembly complexity. Consider its 200 mW power dissipation limit and 250 MHz frequency response to ensure suitability for the target application's thermal and speed requirements compared to discrete transistor solutions.

Part Context

This part belongs to Toshiba’s pre-biased transistor portfolio, designed to replace multiple discrete components with a single integrated solution. The S-MINI package offers a small footprint suitable for portable electronics and dense PCB layouts. It serves as a direct replacement for various legacy NPN switching transistors requiring integrated bias networks in consumer and industrial devices.

Replacement Considerations

  • RN1417LT146F(NA,T

FAQ

What is the function of the internal resistor in the RN1417?

The internal resistor provides base biasing, allowing the transistor to switch on reliably with standard logic levels without requiring external base resistors.

Is the RN1417(TE85L,F) suitable for high-frequency applications?

Yes, it supports a maximum operating frequency of 250 MHz, making it appropriate for high-speed switching tasks.

RN1417(TE85L,F)RN1417(TE85L,F)
$0.26
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