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The RN1417(TE85L,F) is a pre-biased NPN bipolar transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN transistor with a built-in bias resistor network in a compact surface-mount package. Key electrical specifications include a collector-emitter voltage (Vceo) of -50 V, a continuous collector current (Ic) of -100 mA, and a power dissipation (Pd) of 200 mW. The device features a maximum operating frequency of 250 MHz and a typical input resistance of 4.7 kΩ. It operates within a temperature range of -40°C to +85°C and complies with RoHS standards.
Verify the specific suffix TE85L,F against official Toshiba documentation to confirm tape-and-reel packaging and lead-free compliance. Ensure the requested quantity aligns with standard factory pack sizes. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and current production status before finalizing procurement orders.
Select this component when a compact, single-channel NPN switch with integrated base biasing is required. It eliminates external resistor components, reducing board space and assembly complexity. Consider its 200 mW power dissipation limit and 250 MHz frequency response to ensure suitability for the target application's thermal and speed requirements compared to discrete transistor solutions.
This part belongs to Toshiba’s pre-biased transistor portfolio, designed to replace multiple discrete components with a single integrated solution. The S-MINI package offers a small footprint suitable for portable electronics and dense PCB layouts. It serves as a direct replacement for various legacy NPN switching transistors requiring integrated bias networks in consumer and industrial devices.
The internal resistor provides base biasing, allowing the transistor to switch on reliably with standard logic levels without requiring external base resistors.
Yes, it supports a maximum operating frequency of 250 MHz, making it appropriate for high-speed switching tasks.