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The RN1418,LF is a single NPN epitaxial digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a bias resistor network within a SOT-23 surface-mount package to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 0.1 A. The device features a minimum DC current gain (hFE) of 50 at IC=10mA and VCE=5V. Internal resistors are configured with R1 at 4.7 kOhms and R2 at 10 kOhms, yielding a built-in bias resistor ratio of 0.21. The component supports a transition frequency (fT) of 250 MHz and dissipates up to 200 mW of power.
Verify the specific suffix and packaging configuration when sourcing, as availability may vary between tape-and-reel and cut-tape formats. Confirm RoHS compliance status through official distributor documentation or manufacturer datasheets prior to integration. Ensure the selected variant matches the required bias resistor values and package dimensions for the target PCB layout.
Select this component for designs requiring a single NPN pre-biased transistor with a 4.7 kOhm base resistor and 10 kOhm emitter resistor. The 50 V rating and 100 mA current capacity suit low-to-medium power logic interfacing. Verify that the SOT-23 footprint aligns with assembly capabilities and that the 250 MHz frequency response meets signal integrity requirements.
The RN1418 belongs to Toshiba's RN series of bias resistor-built-in transistors. This family consolidates discrete BJT and resistor functions into compact packages like SOT-23. These devices replace multiple external components, reducing board space and simplifying assembly processes for standard logic and analog switching tasks.
Publicly confirmed substitute part numbers for the RN1418,LF are not available in the provided source material. Cross-reference internal resistor ratios and pin configurations carefully if considering alternative manufacturers' equivalents.