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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SMINI
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：S-Mini
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Overview
The RN1418(TE85L,F) is a Silicon NPN epitaxial type pre-bias transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN transistor with a built-in bias resistor in an SOT-23 package. The device features a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 200 mW. The typical input resistance is 47 kOhms, and the DC current gain (hFE) is specified at a minimum of 50.
Feature Summary
- Integrates a single NPN transistor with a built-in bias resistor to reduce component count.
- Designed for compact equipment manufacturing through reduced assembly complexity.
- Optimized for switching, inverter, interface, and driver circuit applications.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix TE85L,F against the manufacturer's latest datasheet to confirm packaging and tape specifications. Ensure the component meets RoHS compliance requirements for the intended production environment. Cross-reference the part number with official Toshiba Semiconductor and Storage documentation to validate availability and lead times before finalizing procurement plans.
Selection Notes
Select this component when a single NPN switch with integrated biasing is required in a small surface-mount footprint. The 47 kOhm internal resistor value suits standard logic interface applications. Verify that the 50 V collector-emitter voltage and 100 mA current ratings exceed the maximum operational stresses of the target circuit design.
Part Context
This part belongs to Toshiba's line of bias resistor built-in transistors, which combine discrete transistor and resistor functions into a single package. The SOT-23 form factor allows for high-density PCB layouts. This series is engineered to simplify circuit design by eliminating external base resistors while maintaining consistent electrical characteristics across production batches.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Toshiba's official cross-reference documentation or distributor databases for equivalent components with matching pinouts and electrical parameters.
FAQ
What is the configuration of the RN1418(TE85L,F)?
It is a single NPN transistor with a built-in bias resistor.
What is the typical input resistance value?
The typical input resistance is 47 kOhms.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage is 50 V.
