RN1421TE85LF

Overview

The RN1421TE85LF is a pre-biased NPN bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. It features an S-Mini surface-mount package with integrated biasing resistors for simplified circuit design. Key electrical specifications include a maximum collector-emitter voltage of 50 V, a continuous collector current of 800 mA, and a maximum operating frequency of 300 MHz. The device has a power dissipation rating of 200 mW, a minimum DC current gain (hFE) of 60 at 100 mA, and a collector cutoff current of 500 nA.

Feature Summary

• Integrated pre-biasing network reduces component count and simplifies PCB layout
• High-speed switching capability with a 300 MHz maximum operating frequency
• Robust current handling with 800 mA continuous collector current rating

Applications

• General-purpose switching circuits
• Driver stages for low-power loads
• Logic interface level shifting

Procurement Notes

Verify the complete ordering code including suffixes against official Toshiba documentation to ensure correct package and tape/reel specifications. Confirm RoHS compliance status and lead-free markings on the datasheet before procurement. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability.

Selection Notes

Select this component when a compact NPN switch with high current capacity and integrated biasing is required. Ensure the application voltage does not exceed 50 V and current requirements stay within 800 mA limits. Consider thermal management for the S-Mini package given the 200 mW power dissipation constraint in enclosed environments.

Part Context

This device belongs to Toshiba's pre-biased transistor series, designed to replace discrete resistor-transistor combinations. It offers space savings and improved reliability compared to discrete solutions. The S-Mini package provides a small footprint suitable for dense surface-mount assemblies.

Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic replacements may differ in hFE characteristics or internal resistor values.