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The RN1424TE85LF is a single NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN epitaxial planar silicon transistor with a 22 kΩ base bias resistor into a compact surface-mount package. The device operates with a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 120 and a transition frequency of 150 MHz. The component is designed for low-power switching applications within a specified operating temperature range.
Verify the exact suffix TE85LF against the manufacturer's latest datasheet to confirm packaging type and tape-and-reel specifications. Confirm end-of-life status or obsolescence notices directly with Toshiba Semiconductor and Storage before finalizing procurement plans, as availability may vary.
Select this component when a single NPN switch with integrated base drive is required. Ensure the 22 kΩ internal resistance matches the input impedance requirements of the driving source. Verify that the 50 V collector-emitter voltage rating exceeds the maximum circuit voltage under all operating conditions.
This part belongs to the RN series of bias resistor built-in transistors from Toshiba. These devices are engineered to simplify digital circuit design by replacing discrete transistor-resistor combinations. The TE85LF suffix typically denotes a specific surface-mount package configuration used in automated assembly processes.
Direct substitutes must match the NPN polarity, 100 mA current rating, 50 V voltage rating, and 22 kΩ internal base resistance. Verify pinout compatibility and thermal dissipation characteristics before substituting with components from other manufacturers.