RN1424TE85LF

RN1424TE85LF

$0.38
  • Description:TRANS PREBIAS NPN 50V 0.8A SMINI
  • Series:-

SKU:c2b22fab7ac9 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.8A SMINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:90 @ 100mA, 1V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 50mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:300 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini

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RN1424TE85LF

Overview

The RN1424TE85LF is a single NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN epitaxial planar silicon transistor with a 22 kΩ base bias resistor into a compact surface-mount package. The device operates with a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 120 and a transition frequency of 150 MHz. The component is designed for low-power switching applications within a specified operating temperature range.

Feature Summary

  • Integrates a single NPN transistor with a fixed 22 kΩ base resistor to reduce external component count.
  • Utilizes a small surface-mount package suitable for high-density PCB layouts.
  • Features high DC current gain and fast switching speed for efficient signal processing.

Applications

  • General-purpose switching circuits
  • Inverter logic circuits
  • Interface driver stages

Procurement Notes

Verify the exact suffix TE85LF against the manufacturer's latest datasheet to confirm packaging type and tape-and-reel specifications. Confirm end-of-life status or obsolescence notices directly with Toshiba Semiconductor and Storage before finalizing procurement plans, as availability may vary.

Selection Notes

Select this component when a single NPN switch with integrated base drive is required. Ensure the 22 kΩ internal resistance matches the input impedance requirements of the driving source. Verify that the 50 V collector-emitter voltage rating exceeds the maximum circuit voltage under all operating conditions.

Part Context

This part belongs to the RN series of bias resistor built-in transistors from Toshiba. These devices are engineered to simplify digital circuit design by replacing discrete transistor-resistor combinations. The TE85LF suffix typically denotes a specific surface-mount package configuration used in automated assembly processes.

Replacement Considerations

Direct substitutes must match the NPN polarity, 100 mA current rating, 50 V voltage rating, and 22 kΩ internal base resistance. Verify pinout compatibility and thermal dissipation characteristics before substituting with components from other manufacturers.

RN1424TE85LFRN1424TE85LF
$0.38
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