RN1426TE85LF

Overview

The RN1426TE85LF is a single NPN epitaxial planar silicon transistor manufactured by Toshiba Semiconductor and Storage. It belongs to the Bias Resistor Built-in Transistor (BRT) series, integrating a monolithic bias resistor network with an NPN transistor die in a compact surface-mount package. The device is designed for switching applications, offering high collector current capability of up to 800mA and a collector-emitter breakdown voltage of 50V. Key electrical characteristics include a low saturation voltage and a typical base resistor value of 4.7kΩ, facilitating direct interface with digital logic circuits while minimizing external component count.

Feature Summary

• Integrates a built-in bias resistor network with an NPN transistor to simplify circuit design and reduce assembly costs.
• Supports high-current switching operations with a maximum collector current rating of 800mA.
• Features a low collector-emitter saturation voltage for efficient power handling in switching applications.
• Utilizes a small surface-mount package footprint suitable for space-constrained portable equipment.

Applications

• Switching circuits for general-purpose digital logic interfacing
• Inverter circuits requiring direct drive from microcontrollers or logic gates
• Driver circuits for relays, lamps, or solenoids
• Interface circuits between different voltage domains

Procurement Notes

Verify the complete part number including the suffix TE85L,F against official Toshiba Semiconductor and Storage documentation to ensure correct packaging and lead-free compliance. Confirm that the specific revision matches the intended application requirements, as manufacturing processes may evolve. Cross-reference with authorized distributors to validate authenticity and traceability before procurement.

Selection Notes

Select this component when a single NPN BRT with high current capacity (800mA) is required. Ensure the integrated base resistance value aligns with the driving logic level and desired saturation depth. Compare thermal dissipation capabilities against the expected load current and ambient temperature conditions to verify junction temperature limits are not exceeded during operation.

Part Context

This component is part of Toshiba's RN series of Bias Resistor Built-in Transistors. The RN1426 specifically denotes a single NPN configuration with high current handling. It complements other devices in the family such as the RN24xx series, providing designers with standardized solutions for common switching tasks without discrete resistor networks.

Replacement Considerations

Publicly confirmed substitute part numbers were not identified in the provided source material. Designers should consult Toshiba's official cross-reference guides or contact technical support directly for verified equivalent components that match the 800mA current rating and pinout configuration.