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The RN1427TE85LF is a single NPN bias resistor transistor manufactured by Toshiba Semiconductor and Storage. It integrates a built-in base resistor with a value of 10 kOhms into a compact SMD package. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 100 and a power dissipation rating of 200 mW. The component operates within a temperature range of -55°C to +150°C and utilizes an SOT-346-3 surface-mount package.
Verify the specific ordering code suffix against the manufacturer's latest documentation to ensure correct packaging and tape specifications. Confirm RoHS compliance status and lead times directly with authorized distributors prior to order placement, as supply chain conditions may vary.
Select this component when a single NPN switch with a fixed 10 kOhm input resistance is required. Ensure the application voltage does not exceed the 50 V collector-emitter limit and that the thermal design accommodates the 200 mW power dissipation in the target operating environment.
This part belongs to Toshiba's RN series of pre-biased transistors, which combine bipolar junction transistors with internal resistors. The TE85L suffix indicates a specific reel-based surface-mount packaging format used for automated assembly processes.
Direct substitutes must match the NPN polarity, 10 kOhm base resistance, 50 V VCEO rating, and SOT-346-3 package dimensions. Verify pinout compatibility before implementation.