RN1427TE85LF

RN1427TE85LF

$0.43
  • Description:TRANS PREBIAS NPN 50V 0.8A SMINI
  • Series:-

SKU:960dcb1af701 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.8A SMINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:90 @ 100mA, 1V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 50mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:300 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini

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RN1427TE85LF

Overview

The RN1427TE85LF is a single NPN bias resistor transistor manufactured by Toshiba Semiconductor and Storage. It integrates a built-in base resistor with a value of 10 kOhms into a compact SMD package. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 100 and a power dissipation rating of 200 mW. The component operates within a temperature range of -55°C to +150°C and utilizes an SOT-346-3 surface-mount package.

Feature Summary

  • Integrates a 10 kOhm base resistor directly with the NPN transistor to reduce circuit board space and assembly complexity.
  • Designed for high-speed switching applications with a transition frequency supporting efficient digital signal processing.
  • Utilizes a small footprint SOT-346-3 package suitable for dense surface-mount layouts.

Applications

  • General-purpose switching circuits
  • Inverter logic circuits
  • Driver circuits for low-power loads

Procurement Notes

Verify the specific ordering code suffix against the manufacturer's latest documentation to ensure correct packaging and tape specifications. Confirm RoHS compliance status and lead times directly with authorized distributors prior to order placement, as supply chain conditions may vary.

Selection Notes

Select this component when a single NPN switch with a fixed 10 kOhm input resistance is required. Ensure the application voltage does not exceed the 50 V collector-emitter limit and that the thermal design accommodates the 200 mW power dissipation in the target operating environment.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which combine bipolar junction transistors with internal resistors. The TE85L suffix indicates a specific reel-based surface-mount packaging format used for automated assembly processes.

Replacement Considerations

Direct substitutes must match the NPN polarity, 10 kOhm base resistance, 50 V VCEO rating, and SOT-346-3 package dimensions. Verify pinout compatibility before implementation.

RN1427TE85LFRN1427TE85LF
$0.43
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