RN1441ATE85LF

Description：TRANS PREBIAS NPN 20V 0.3A SMINI
Series：-

SKU:3c730a023493 Category: Single, Pre-Biased Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS NPN 20V 0.3A SMINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)
Resistors Included：R1 Only
Transistor Type：NPN - Pre-Biased
Current - Collector (Ic) (Max)：300 mA
Voltage - Collector Emitter Breakdown (Max)：20 V
Resistor - Base (R1)：5.6 kOhms
Resistor - Emitter Base (R2)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 4mA, 2V
Vce Saturation (Max) @ Ib, Ic：100mV @ 3mA, 30mA
Current - Collector Cutoff (Max)：100nA (ICBO)
Frequency - Transition：30 MHz
Power - Max：200 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：S-Mini

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RN1441ATE85LF

Overview

The RN1441ATE85LF is a single NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It features a maximum collector current of 300 mA and a maximum power dissipation of 200 mW. The device operates with a transition frequency of 30 MHz and utilizes a surface-mount S-Mini package, specifically TO-236-3, SC-59, or SOT-23-3. This component integrates internal biasing resistors to simplify circuit design for switching applications.

Feature Summary

Integrates NPN bipolar junction transistor with built-in base biasing resistors
Designed for high-speed switching operations within specified frequency limits
Utilizes compact surface-mount packaging for automated assembly processes

Applications

General-purpose signal switching circuits
Driver stages for low-power loads
Logic interface buffering in embedded systems

Procurement Notes

Verify the specific ordering suffix and manufacturer part number against official Toshiba documentation to ensure component authenticity. Confirm that the received units match the specified S-Mini package type and electrical ratings. Check for any obsolescence notices or lifecycle status updates directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a single NPN pre-biased transistor is required for space-constrained designs. Ensure the application voltage and current requirements remain within the 20V and 300mA limits respectively. Consider the thermal constraints associated with the 200mW power dissipation rating during PCB layout planning.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which combine discrete transistors with integrated resistors. These devices are engineered to reduce board space and simplify schematic design by eliminating external biasing components typically required for standard bipolar junction transistors.