RN1442ATE85LF

Overview

The RN1442ATE85LF is an NPN small-signal transistor manufactured by Toshiba Semiconductor and Storage. It features a built-in bias resistor configuration within a surface-mount S-Mini (SC-59/TO-236MOD) package. The device supports a maximum collector current of 0.3 A and a collector-emitter voltage of 20 V. Key electrical characteristics include a minimum DC current gain (hFE) of 200, ensuring reliable switching performance in general-purpose applications.

Feature Summary

• Integrates built-in bias resistors for simplified circuit design
• Optimized for high-speed switching operations
• Compact surface-mount packaging suitable for space-constrained layouts

Applications

• General-purpose signal switching
• Low-power digital logic interfaces
• Biasing circuits in consumer electronics

Procurement Notes

Verify the specific suffix TE85L against official Toshiba documentation to confirm tape-and-reel specifications. Ensure compatibility with standard S-Mini footprint dimensions during PCB layout. Cross-reference datasheet revisions to confirm parameter stability for long-term production runs.

Selection Notes

Select this component when a compact NPN transistor with integrated biasing is required. The 20V rating suits low-voltage logic systems. Consider thermal dissipation limits in dense arrays. Verify that the 0.3A current capacity meets load requirements without exceeding junction temperature constraints.

Part Context

This part belongs to Toshiba's pre-biased transistor series, designed to reduce external component count. The S-Mini package offers a small form factor compared to traditional through-hole alternatives. It serves as a direct replacement for discrete NPN transistors requiring base biasing networks in modern portable devices.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source data. Consult official Toshiba cross-reference guides for equivalent components.