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The RN2101,LF(CT is a single PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a bipolar junction transistor with built-in bias resistors in an SSM (SOT-416) surface-mount package. The device supports a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. Key electrical parameters include a minimum DC current gain (hFE) of 70 at -10 mA and -5 V, a typical base resistor (R1) of 10 kOhms, and a transition frequency of 200 MHz. Maximum power dissipation is rated at 100 mW.
Verify the specific suffix configuration when sourcing replacements, as packaging variants such as cut tape or reel may differ. Confirm RoHS compliance status and moisture sensitivity level requirements against the target assembly process specifications before finalizing procurement orders.
Select this component for designs requiring a single PNP switch with integrated biasing. Ensure the required base resistance matches the 10 kOhm specification to maintain proper drive characteristics. Verify that the 50 V voltage rating and 100 mA current limits exceed the maximum operational loads in the application circuit.
This part belongs to Toshiba's RN series of digital transistors, which combine bipolar junction transistors with internal bias networks. The SSM package provides a compact footprint suitable for space-constrained printed circuit board layouts. The series is designed to reduce external component count and simplify layout routing compared to discrete resistor-transistor combinations.
Publicly confirmed substitute part numbers are not available in the provided source data. Cross-reference with other single PNP digital transistors having similar 10 kOhm base resistance and 50 V ratings if direct replacement is necessary.