RN2101MFV,L3F(CT

RN2101MFV,L3F(CT

$0.13
  • Description:TRANS PREBIAS PNP 50V 0.1A VESM
  • Series:-

SKU:e035f59a7a10 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A VESM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:150 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:VESM

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RN2101MFV,L3F(CT

Overview

The RN2101MFV,L3F is a PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single internal bias resistor (R1) with a PNP bipolar junction transistor in a compact SOT-723 (VESM) surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA, with a total power dissipation rating of 150 mW. The integrated R1 value is specified at 47 kΩ. This configuration simplifies circuit design by reducing component count while maintaining reliable switching performance for digital interface applications.

Feature Summary

  • Integrates a PNP transistor with a single built-in bias resistor to minimize external component requirements
  • Utilizes an ultra-small SOT-723 (VESM) package designed for high-density surface-mount mounting
  • Supports standard logic interface voltages with a 50 V collector-emitter breakdown voltage

Applications

  • Switching circuits for general-purpose digital logic interfaces
  • Inverter circuits requiring compact form factors
  • Driver circuits for low-power signal control

Procurement Notes

Verify the specific suffix L3F(CT against the official Toshiba datasheet to confirm tape-and-reel packaging specifications. Ensure the order matches the exact part number RN2101MFV,L3F to guarantee correct resistor values and polarity. Cross-reference manufacturer documentation for handling precautions related to the small outline package.

Selection Notes

Select this component when a PNP digital transistor with a 47 kΩ base resistor is required. Compare against complementary NPN models like the RN1101MFV for push-pull configurations. Verify that the 100 mA current rating and 50 V voltage limits align with the target circuit's operational parameters before finalizing the design.

Part Context

This component belongs to the Toshiba RN series of Bias Resistor Built-In Transistors (Digital Transistors). The RN21xx series specifically denotes PNP types, where the suffix '01' indicates a 47 kΩ input resistor. These devices are engineered to replace discrete transistor-resistor networks, offering space savings and simplified assembly in modern electronic equipment.

Replacement Considerations

Direct functional substitutes within the same family include other PNP digital transistors with identical 47 kΩ bias resistors, such as the RN2101FV or RN2101MFV without the specific reel suffix. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers.

RN2101MFV,L3F(CTRN2101MFV,L3F(CT
$0.13
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