ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：150 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
Download product information
Overview
The RN2101MFV,L3XHF(CT is a PNP bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP bipolar junction transistor with an internal base resistor, eliminating the need for external components in switching applications. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 100 mA. It operates within a temperature range of -55°C to +150°C and has a maximum power dissipation of 150 mW. The component is housed in a compact SOT-723 (VESM) surface-mount package, designed for efficient PCB layout in general-purpose digital circuits.
Feature Summary
- Integrates a PNP transistor with a built-in base resistor to simplify circuit design and reduce board space.
- Provides high DC current gain for reliable switching performance in low-power digital logic applications.
- Engineered for surface-mount assembly using the small SOT-723 package format.
Applications
- General-purpose digital switching circuits
- Logic level translation interfaces
- Driver stages for LEDs and relays
Procurement Notes
Verify the exact suffix L3XHF(CT against official Toshiba documentation to confirm packaging type and reel specifications. Ensure compatibility with RoHS directives if required by your manufacturing standards. Cross-reference the part number with authorized distributors to confirm current availability and lead times before finalizing procurement plans.
Selection Notes
Select this component when a PNP configuration with integrated biasing is required for space-constrained designs. Compare the 47 kOhm base resistance value against other RN21xx series variants to ensure proper input impedance matching for your specific drive signal. Verify that the 50 V breakdown voltage meets the system's operational requirements.
Part Context
This part belongs to Toshiba's RN21xx series of bias resistor built-in transistors. These devices are designed as drop-in replacements for discrete transistor-resistor networks. The series offers various resistance ratios and polarities to accommodate different digital logic families and switching speeds.
Replacement Considerations
Compatible substitutes include other PNP BRTs with similar 50 V ratings and 100 mA current capabilities. Check for equivalent base resistance values and SOT-723 package compatibility from manufacturers like Onsemi or ROHM. Ensure thermal characteristics match the original design constraints.
