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The RN2102ACT(TPL3) is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single silicon PNP epitaxial transistor with built-in bias resistors, specifically designed for switching, inverter, interface, and driver circuit applications. The device features a maximum collector current of 80 mA and a collector-emitter breakdown voltage of 50 V. Key electrical parameters include a DC current gain (hFE) minimum of 70 at 10 mA and 5 V, and a saturation voltage of 300 mV max at 250 µA base current and 5 mA collector current. The unit operates within a junction temperature range up to 150 °C and is housed in a compact SC-70 package.
Verify the specific suffix TPL3 against official Toshiba documentation to confirm pinout orientation and resistor values, as suffixes often denote packaging or specific resistance ratios. Ensure the component meets RoHS compliance requirements if mandated by the target application standards. Cross-reference the manufacturer part number with authorized distributors to confirm authenticity and traceability.
Select this component when a PNP digital transistor with integrated biasing is required for space-constrained designs. The SC-70 package offers a small footprint suitable for surface mount applications. Consider the 50 V breakdown voltage and 80 mA current rating to ensure adequate headroom for the intended load. Verify that the built-in resistor ratio matches the driving logic levels required by the upstream control circuitry.
The RN2102 series belongs to Toshiba's lineup of Bias Resistor Built-In Transistors (BRT). These devices replace discrete resistor networks, reducing board space and assembly costs. The ACT variant typically denotes specific resistor configurations within the family. This series is widely used in consumer electronics and industrial equipment where reliable switching and interface functions are critical.
Compatible substitutes include other PNP BRTs with similar 50 V ratings and SC-70 packaging, such as the RN2102MFV or equivalent parts from other manufacturers like ROHM or ON Semiconductor. Ensure the replacement maintains the same hFE characteristics and saturation voltage limits to preserve circuit timing and drive capability.