RN2102MFV,L3F(CT

Overview

The RN2102MFV,L3F is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single silicon PNP epitaxial transistor with built-in bias resistors in a compact VESM-3 surface-mount package. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. It includes an internal bias resistor ratio of 1:1, simplifying circuit design by eliminating external components. The unit operates within a junction temperature range up to 150 °C and offers a minimum DC current gain (hFE) of 70.

Feature Summary

• Integrates a PNP bipolar junction transistor with built-in bias resistors for simplified interface design.
• Utilizes a small outline VESM-3 surface-mount package for efficient PCB space utilization.
• Features a standard 1:1 bias resistor ratio to facilitate direct logic gate interfacing.

Applications

• Switching applications requiring compact form factors.
• Inverter circuits for signal inversion tasks.
• Interface circuits connecting microcontrollers to peripheral devices.
• Driver circuits for low-power load control.

Procurement Notes

Verify the specific suffix L3F(CT) against official Toshiba documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with automated pick-and-place equipment requirements. Cross-reference the exact part number with authorized distributors to confirm availability and authenticity. Check for any recent product change notices regarding marking or packaging updates.

Selection Notes

Select this component when a PNP configuration with a 1:1 resistor ratio is required. It is suitable for applications needing 50 V breakdown and 100 mA current handling in a minimal footprint. Compare hFE minimums and power dissipation limits against circuit demands. Consider thermal management constraints given the small package size and 150 °C maximum junction temperature rating.

Part Context

This part belongs to Toshiba's RN21xx series of bias resistor-built-in transistors. These devices are designed to replace discrete resistor-transistor networks, reducing board space and assembly costs. The MFV suffix indicates the VESM-3 package type, while L3F denotes specific taping and reel configurations for surface-mount technology production lines.

Replacement Considerations

Direct substitutes include other RN2102 variants such as RN2102MFV or RN2102ACT from Toshiba. Verify pinout compatibility and electrical parameters like VCEO and IC before substitution. Alternative manufacturers may offer similar PNP digital transistors, but resistor ratios and hFE characteristics must be matched precisely.