RN2102MFV,L3XHF(CT

RN2102MFV,L3XHF(CT

$0.22
  • Description:TRANS PREBIAS PNP 50V 0.1A VESM
  • Series:-

SKU:6d5bb55a6f1b Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A VESM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:150 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:VESM

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RN2102MFV,L3XHF(CT

Overview

The RN2102MFV,L3XHF(CT is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single silicon PNP epitaxial transistor with built-in bias resistors in a compact surface-mount package. The device is designed for switching, inverter, interface, and driver circuit applications. Key electrical specifications include a maximum collector current of 100 mA and a collector-emitter voltage rating of 50 V. The component operates within a temperature range up to 150 °C and features a minimum DC current gain (hFE) of 70.

Feature Summary

  • Integrates a PNP transistor with built-in bias resistors to simplify circuit design
  • Utilizes silicon epitaxial type construction for reliable switching performance
  • Designed for space-saving surface mount applications

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific suffix L3XHF(CT against official Toshiba documentation to confirm packaging details and compliance status. Ensure the ordering code matches the required reel or cut tape configuration. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.

Selection Notes

Select this component when a PNP digital transistor with integrated biasing is required for low-power switching tasks. Consider the 50 V voltage rating and 100 mA current limit to ensure compatibility with the target load. Verify that the SOT-723 package dimensions fit the PCB layout constraints.

Part Context

This part belongs to Toshiba's RN series of bias resistor built-in transistors, commonly referred to as digital transistors. These components replace discrete resistor networks and individual transistors, reducing board space and assembly costs. The RN2102 variant specifically denotes a PNP configuration with a standard resistor ratio.

Replacement Considerations

Compatible substitutes include other PNP digital transistors with similar voltage and current ratings, such as the RN2102ACT or RN2102MFV from Toshiba. External manufacturers may offer equivalent parts, but verify pinout compatibility and electrical parameters like hFE and saturation voltage.

RN2102MFV,L3XHF(CTRN2102MFV,L3XHF(CT
$0.22
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