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The RN2102MFV,L3XHF(CT is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single silicon PNP epitaxial transistor with built-in bias resistors in a compact surface-mount package. The device is designed for switching, inverter, interface, and driver circuit applications. Key electrical specifications include a maximum collector current of 100 mA and a collector-emitter voltage rating of 50 V. The component operates within a temperature range up to 150 °C and features a minimum DC current gain (hFE) of 70.
Verify the specific suffix L3XHF(CT against official Toshiba documentation to confirm packaging details and compliance status. Ensure the ordering code matches the required reel or cut tape configuration. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.
Select this component when a PNP digital transistor with integrated biasing is required for low-power switching tasks. Consider the 50 V voltage rating and 100 mA current limit to ensure compatibility with the target load. Verify that the SOT-723 package dimensions fit the PCB layout constraints.
This part belongs to Toshiba's RN series of bias resistor built-in transistors, commonly referred to as digital transistors. These components replace discrete resistor networks and individual transistors, reducing board space and assembly costs. The RN2102 variant specifically denotes a PNP configuration with a standard resistor ratio.
Compatible substitutes include other PNP digital transistors with similar voltage and current ratings, such as the RN2102ACT or RN2102MFV from Toshiba. External manufacturers may offer equivalent parts, but verify pinout compatibility and electrical parameters like hFE and saturation voltage.