RN2103ACT(TPL3)

RN2103ACT(TPL3)

$0.26
  • Description:TRANS PREBIAS PNP 50V 0.08A CST3
  • Series:-

SKU:803475ce284b Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.08A CST3
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):80 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-101, SOT-883
  • Supplier Device Package:CST3

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RN2103ACT(TPL3)

Overview

The RN2103ACT(TPL3) is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single bipolar junction transistor with built-in bias resistors in a compact surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a typical input resistance ratio of 1:1. The device features a minimum DC current gain (hFE) of 70 at -10 mA and -5 V, with a maximum operating frequency of 200 MHz. Power dissipation is rated at 100 mW, and the unit supports operation up to a maximum temperature of +150 °C.

Feature Summary

  • Integrates a PNP transistor with dual bias resistors for simplified circuit design
  • Optimized for high-speed switching applications with a 200 MHz transition frequency
  • Designed for low-power consumption with 100 mW power dissipation rating

Applications

  • Switching circuits in consumer electronics
  • Interface driver circuits for logic level translation
  • Inverter circuits in small signal applications

Procurement Notes

Verify the specific suffix TPL3 against official Toshiba documentation to confirm packaging type and reel quantity. Ensure compatibility with AEC-Q200 requirements if automotive qualification is needed, as standard RN2103 variants may differ. Cross-reference the manufacturer part number with distributor listings to confirm availability and lead times without relying on generic stock data.

Selection Notes

Select this component when a PNP configuration with a 1:1 resistor ratio is required for base drive applications. Compare hFE minimums and VCEO ratings against alternative BRTs to ensure margin for the specific load conditions. Verify that the SOT-323 or equivalent footprint matches the PCB layout constraints before finalizing the bill of materials.

Part Context

The RN2103 series belongs to Toshiba's family of Bias Resistor Built-in Transistors (BRT). These devices replace discrete resistor networks, reducing board space and assembly costs. The ACT variant typically denotes a specific tape-and-reel packaging format intended for automated surface-mount assembly processes.

Replacement Considerations

Direct substitutes include other PNP BRTs with 50V VCEO and 1:1 resistor ratios, such as the RN2103 from other manufacturers like ROHM or ON Semiconductor. Verify pinout compatibility and thermal characteristics before substitution.

RN2103ACT(TPL3)RN2103ACT(TPL3)
$0.26
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