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The RN2103ACT(TPL3) is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single bipolar junction transistor with built-in bias resistors in a compact surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a typical input resistance ratio of 1:1. The device features a minimum DC current gain (hFE) of 70 at -10 mA and -5 V, with a maximum operating frequency of 200 MHz. Power dissipation is rated at 100 mW, and the unit supports operation up to a maximum temperature of +150 °C.
Verify the specific suffix TPL3 against official Toshiba documentation to confirm packaging type and reel quantity. Ensure compatibility with AEC-Q200 requirements if automotive qualification is needed, as standard RN2103 variants may differ. Cross-reference the manufacturer part number with distributor listings to confirm availability and lead times without relying on generic stock data.
Select this component when a PNP configuration with a 1:1 resistor ratio is required for base drive applications. Compare hFE minimums and VCEO ratings against alternative BRTs to ensure margin for the specific load conditions. Verify that the SOT-323 or equivalent footprint matches the PCB layout constraints before finalizing the bill of materials.
The RN2103 series belongs to Toshiba's family of Bias Resistor Built-in Transistors (BRT). These devices replace discrete resistor networks, reducing board space and assembly costs. The ACT variant typically denotes a specific tape-and-reel packaging format intended for automated surface-mount assembly processes.
Direct substitutes include other PNP BRTs with 50V VCEO and 1:1 resistor ratios, such as the RN2103 from other manufacturers like ROHM or ON Semiconductor. Verify pinout compatibility and thermal characteristics before substitution.